Symposium on Wide Bandgap Semiconductors (III-Nitrides, SiC, and Diamond): Part of the International Union of Materials Research Societies and International Conference on Electronic Materials 2010 (IUMRS&ICEM - Korea 2010)FREITAS, Jaime A; KIM, Jihyun; JONG KYU KIM et al.Journal of crystal growth. 2011, Vol 326, Num 1, issn 0022-0248, 221 p.Conference Proceedings

Effect of Ga content and sintering time on electrical properties of InGaZnO thin film transistors fabricated by sol-gel processJUN HYUK CHOI; SOO MIN HWANG; CHANG MIN LEE et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 175-178, issn 0022-0248, 4 p.Conference Paper

Effect of cathodes on high efficiency inorganic-organic hybrid LEDs based on CdSe/ZnS quantum dotsNGUYEN HUU TUAN; KEN HA KOH; PHAM THU NGA et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 109-112, issn 0022-0248, 4 p.Conference Paper

Electrical and optical characterization of GaN micro-wiresJUNG, Younghun; AHN, Jaehui; MASTRO, Michael A et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 81-84, issn 0022-0248, 4 p.Conference Paper

Influence of different plasma treatments on electrical and optical properties on sputtered AZO and ITO filmsLEE, Jaehyung; LIM, Donggun; YANG, Keajoon et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 50-57, issn 0022-0248, 8 p.Conference Paper

Thermal annealing effects of MBE-seed-layers on properties of ZnO nanorods grown by hydrothermal methodMIN SU KIM; KWANG GUG YIM; JOO IN LEE et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 195-199, issn 0022-0248, 5 p.Conference Paper

Changes in efficiency of a solar cell according to various surface-etching shapes of silicon substrateMIN GU KANG; TARK, S; JEONG CHUL LEE et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 14-18, issn 0022-0248, 5 p.Conference Paper

Characteristics of CuInS_2/ZnS quantum dots and its application on LEDKIM, Hyunki; JI YEON HAN; DONG SEOK KANG et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 90-93, issn 0022-0248, 4 p.Conference Paper

Comparison of metal-organic decomposed (MOD) cerium oxide (CeO₂) gate deposited on GaN and SiC substratesQUAH, H. J; LIM, W. F; CHEONG, K. Y et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 2-8, issn 0022-0248, 7 p.Conference Paper

Diffusion of chromium in sapphire: The effects of electron beam irradiationAHN, Yong-Kil; SEO, Jin-Gyo; PARK, Jong-Wan et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 45-49, issn 0022-0248, 5 p.Conference Paper

Effect of nitrogen flow ratio on the structural and optical properties of aluminum nitride thin filmsCHO, Shinho.Journal of crystal growth. 2011, Vol 326, Num 1, pp 179-182, issn 0022-0248, 4 p.Conference Paper

Electrical properties of top-gate oxide thin-film transistors with double-channel layersCHEONG, Woo-Seok; SUNG MOOK CHUNG; SHIN, Jae-Hun et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 186-190, issn 0022-0248, 5 p.Conference Paper

Epitaxial lateral overgrowth of GaN on sapphire substrates using in-situ carbonized photoresist maskKIM, Sang-Il; KIM, Bumjoon; JANG, Samseok et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 200-204, issn 0022-0248, 5 p.Conference Paper

Low-temperature soluble InZnO thin film transistors by microwave annealingSONG, Keunkyu; CHANG YOUNG KOO; JUN, Taehwan et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 23-27, issn 0022-0248, 5 p.Conference Paper

Spray pyrolysis synthesis of MAl₂O₄:Eu²⁺ (M = Ba, Sr) phosphor for UV LED excitationCHUNG, Wonkeun; HONG JEONG YU; SUN HEE PARK et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 73-76, issn 0022-0248, 4 p.Conference Paper

Strongly-enhanced near-band-edge photoluminescence of Nb-implanted ZnO filmsCHANG OH KIM; DONG HEE SHIN; CHOI, Suk-Ho et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 42-44, issn 0022-0248, 3 p.Conference Paper

The crossover of preferred orientation in heteroepitaxial ZnO/MgO(0 0 1) filmsSEO, S. H; KANG, H. C.Journal of crystal growth. 2011, Vol 326, Num 1, pp 166-170, issn 0022-0248, 5 p.Conference Paper

The effect of deposition RF power on the SiC passivation layer synthesized by an RF magnetron sputtering methodJAE KEUN SEO; KO, Ki-Han; WON SEOK CHOI et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 183-185, issn 0022-0248, 3 p.Conference Paper

Color tuning of organic light-emitting diodes by adjusting the ligands of heteroleptic iridium(III) complexesJI HYUN SEO; IN JUN KIM; YOUNG SIK KIM et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 113-115, issn 0022-0248, 3 p.Conference Paper

Heteroepitaxial growth of InN on GaN intermediate layer by PA-MOMBELAI, Fang-I; KUO, Shou-Yi; CHEN, Wei-Chun et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 37-41, issn 0022-0248, 5 p.Conference Paper

InGaN/GaN blue light emitting diodes using Al-doped ZnO grown by atomic layer deposition as a current spreading layerBO HYUN KONG; HYUNG KOUN CHO; MI YANG KIM et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 147-151, issn 0022-0248, 5 p.Conference Paper

Investigation of solution-processed amorphous SrInZnO thin film transistorsDOO HYUN YOON; SI JOON KIM; WOONG HEE JEONG et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 171-174, issn 0022-0248, 4 p.Conference Paper

Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5 MeV protonsKIM, Hong-Yeol; ANDERSON, Travis; MASTRO, Michael A et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 62-64, issn 0022-0248, 3 p.Conference Paper

Preparation of zinc sulfide nanocrystallites from single-molecule precursorsPALVE, Anil M; GARJE, Shivram S.Journal of crystal growth. 2011, Vol 326, Num 1, pp 157-162, issn 0022-0248, 6 p.Conference Paper

Study of green light-emitting diodes grown on semipolar (11-22) GaN/m-sapphire with different crystal qualitiesOH, Dong-Sub; JANG, Jong-Jin; NAM, Okhyun et al.Journal of crystal growth. 2011, Vol 326, Num 1, pp 33-36, issn 0022-0248, 4 p.Conference Paper